MOSIS WAFER ACCEPTANCE TESTS RUN: T92Y (MM_NON-EPI_THK-MTL) VENDOR: TSMC TECHNOLOGY: SCN018 FEATURE SIZE: 0.18 microns Run type: DED INTRODUCTION: This report contains the lot average results obtained by MOSIS from measurements of MOSIS test structures on each wafer of this fabrication lot. SPICE parameters obtained from similar measurements on a selected wafer are also attached. COMMENTS: DSCN6M018_TSMC TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS MINIMUM 0.27/0.18 Vth 0.50 -0.49 volts SHORT 20.0/0.18 Idss 572 -276 uA/um Vth 0.52 -0.49 volts Vpt 4.7 -5.2 volts WIDE 20.0/0.18 Ids0 20.8 -15.2 pA/um LARGE 50/50 Vth 0.42 -0.41 volts Vjbkd 3.7 -4.4 volts Ijlk <50.0 <50.0 pA K' (Uo*Cox/2) 171.0 -37.0 uA/V^2 Low-field Mobility 406.07 87.86 cm^2/V*s COMMENTS: Poly bias varies with design technology. To account for mask bias use the appropriate value for the parameters XL and XW in your SPICE model card. Design Technology XL (um) XW (um) ----------------- ------- ------ SCN6M_DEEP (lambda=0.09) 0.00 -0.01 thick oxide 0.00 -0.01 SCN6M_SUBM (lambda=0.10) -0.02 0.00 thick oxide -0.02 0.00 FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS Vth Poly >6.6 <-6.6 volts PROCESS PARAMETERS N+ P+ POLY N+BLK PLY+BLK M1 M2 UNITS Sheet Resistance 7.0 8.1 8.3 59.5 306.6 0.08 0.08 ohms/sq Contact Resistance 8.3 8.8 8.1 4.83 ohms Gate Oxide Thickness 41 angstrom PROCESS PARAMETERS M3 POLY_HRI M4 M5 M6 N_W UNITS Sheet Resistance 0.08 0.08 0.07 0.01 951 ohms/sq Contact Resistance 9.74 15.36 21.50 23.45 ohms COMMENTS: BLK is silicide block. CAPACITANCE PARAMETERS N+ P+ POLY M1 M2 M3 M4 M5 M6 R_W D_N_W M5P N_W UNITS Area (substrate) 969 1234 101 34 14 9 7 5 4 129 130 aF/um^2 Area (N+active) 8517 53 20 14 11 9 8 aF/um^2 Area (P+active) 8275 aF/um^2 Area (poly) 64 17 10 7 5 4 aF/um^2 Area (metal1) 35 14 9 6 5 aF/um^2 Area (metal2) 36 14 9 6 aF/um^2 Area (metal3) 37 14 9 aF/um^2 Area (metal4) 36 14 aF/um^2 Area (metal5) 35 1039 aF/um^2 Area (r well) 953 aF/um^2 Area (d well) 562 aF/um^2 Area (no well) 140 aF/um^2 Fringe (substrate) 196 229 53 36 29 24 21 19 aF/um Fringe (poly) 68 38 29 23 19 18 aF/um Fringe (metal1) 49 34 22 20 aF/um Fringe (metal2) 45 35 27 23 aF/um Fringe (metal3) 54 34 30 aF/um Fringe (metal4) 63 43 aF/um Fringe (metal5) 66 aF/um CIRCUIT PARAMETERS UNITS Inverters K Vinv 1.0 0.74 volts Vinv 1.5 0.79 volts Vol (100 uA) 2.0 0.08 volts Voh (100 uA) 2.0 1.62 volts Vinv 2.0 0.83 volts Gain 2.0 -24.67 Ring Oscillator Freq. D1024_THK (31-stg,3.3V) 302.91 MHz DIV1024 (31-stg,1.8V) 377.13 MHz Ring Oscillator Power D1024_THK (31-stg,3.3V) 0.07 uW/MHz/gate DIV1024 (31-stg,1.8V) 0.02 uW/MHz/gate COMMENTS: DEEP_SUBMICRON +K1 = 0.5722049 K2 = 0.0219717 K3 = 0.1576753 +K3B = 4.2763642 W0 = 1E-6 NLX = 1.104212E-7 +DVT0W = 0 DVT1W = 0 DVT2W = 0 +DVT0 = 0.6234839 DVT1 = 0.2479255 DVT2 = 0.1 +U0 = 109.4682454 UA = 1.31646E-9 UB = 1E-21 +UC = -1E-10 VSAT = 1.054892E5 A0 = 1.5796859 +AGS = 0.3115024 B0 = 4.729297E-7 B1 = 1.446715E-6 +KETA = 0.0298609 A1 = 0.3886886 A2 = 0.4010376 +RDSW = 199.1594405 PRWG = 0.5 PRWB = -0.4947034 +WR = 1 WINT = 0 LINT = 2.93948E-8 +XL = 0 XW = -1E-8 DWG = -1.998034E-8 +DWB = -2.481453E-9 VOFF = -0.0935653 NFACTOR = 2 +CIT = 0 CDSC = 2.4E-4 CDSCD = 0 +CDSCB = 0 ETA0 = 3.515392E-4 ETAB = -4.804338E-4 +DSUB = 1.215087E-5 PCLM = 0.96422 PDIBLC1 = 3.026627E-3