Ele533 Old Exam Problem np junction 1

Consider a silicon pn junction. The p side is uniformly doped with 10¹⁸ acceptors/cm³. The n side is doped with 10¹⁶ donors/cm³.

1. What is the built in potential?

2. What is the position of the fermi level relative to the intrinsic level on the p side of the junction?

3. The junction area is 10 microns by 10 microns. What is the saturation current, Is, in the equation,

   I = Is*e^V/Vt

   Use the mobility vs doping curves.